Semiconductor Device Engineer | RF Power GaN | SC-Eligible

Semiconductor Device Engineer | RF Power GaN | SC-Eligible

Job Description:

North East England | On-site – 1–2 days home working | Competitive + Bonus + Relocation

This is a new position for a Semiconductor Device Engineer to support both pre-production R&D and volume manufacturing of RF power GaN transistor technologies. You’d be joining a compound semiconductor manufacturer expanding high-performance devices for RF and microwave applications.

This role bridges device physics and wafer fabrication. You’ll use electrical and PCM data to understand real device behaviour, support new technology development, and work with process teams to improve performance, yield, and long-term reliability.

The role:

• Analyse PCM and electrical characterisation data to monitor device performance and process stability.
• Support pre-production device development through evaluation of experimental wafers and split lots.
• Correlate structural and process changes with electrical behaviour in RF power transistors.
• Drive yield, variability, and reliability improvements through data-led root-cause analysis.
• Support rapid response to production excursions and out-of-control events.
• Define and maintain specification and control limits for key device parameters.
• Establish critical process parameters and support SPC and capability reviews.
• Work closely with Process Integration to optimise recipes and module interactions.
• Contribute to device optimisation including threshold control, breakdown behaviour, leakage, and thermal effects.
• Support Product and Test Engineering with:
• PCM structure definitions
• test limits and algorithms
• wafer-to-RF performance correlation
• Contribute to device modelling and simulation activities by correlating silicon results with TCAD and compact models, working alongside modelling specialists where applicable.
• Provide input into layout and design rule limits where device physics and reliability drive physical constraints.

Key knowledge and experience:

• Degree in Electronic / Electrical Engineering, Physics, or similar.
• Strong understanding of semiconductor device physics and transistor behaviour.
• Experience analysing PCM / WAT / E-test and electrical characterisation data.
• Background in semiconductor manufacturing, process integration, product, or device engineering.
• Statistical and analytical skills (SPC, regression, capability analysis, DOE).
• Experience with data analysis tools (JMP, Python, SQL, or similar).
• Exposure to TCAD or device modelling concepts is beneficial, but deep modelling expertise is not essential.
• Experience with GaN, GaAs, RF power, or other III–V technologies is strongly beneficial.
• Comfortable working across R&D and production environments with evolving processes.

What’s on offer:

• Competitive salary with relocation support
• Long-term investment strategy in RF power GaN technologies
• Involvement across both device development and manufacturing scale-up
• High technical ownership and real impact on product performance and yield
• Good progression within a scaling compound semiconductor business

Job Types: Full-time, Permanent

Benefits:

• Company events
• Company pension
• Discounted or free food
• Employee mentoring programme
• Flexitime
• Free parking
• Health & wellbeing programme
• Life insurance
• On-site parking
• Private medical insurance
• Profit sharing
• Referral programme
• Relocation assistance
• Sick pay
• Store discount

Work Location: In person

Salary: £55,000.00-£70,000.00 per year

For further details please contact us.